features xt rectangular led performance 460 nm & 470 nm xr-18? C 18.0 mw min. xr-21? C 21.0 mw min. thin 150 m chip low forward voltage C 3.2 typical at 20 ma single wire bond structure class 2 esd rating sn contact for low-temp. die attach methods die attach options: flux eutectic; flux & temperature (-c) eutectic; temperature & pressure (-d) ? C ? ? ? ? ? ? ? ? C C applications mobile appliance lcd backlighting digital camera flash ? ? xt ? rectangular leds c xxx xr230-s xx 00- x crees xt rectangular leds are the next generation of solid-state leds that combine highly effcient ingan materials with crees proprietary g?sic ? substrate to deliver superior price/performance for high-intensity leds. these led chips have a geometrically enhanced epi-down design to maximize light extraction effciency and require only a single wire bond connection. these vertically structured led chips are approximately 150 microns in height and require a low forward voltage. crees xt rectangular chips are tested for conformity to optical and electrical specifcations and the ability to withstand 1000 v esd. applications for xt rectangular leds include next-generation mobile appliances for use in their lcd backlights and digital camera fash where brightness, sub-miniaturization, and low power consumption are required. c xxx xr230-s xx0 0- x chip diagram top view bottom view die cross section g?sic led chip 230 x 380 m gold bond pad 105 m diameter sic substrate t = 150 m backside metalization cathode (-) anode (+) d a t a s h e e t : c p r 3 d c r e v . - subject to change without notice. www.cree.com
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xthin are registered trademarks, and xt, xr-18 and xr-21 are trademarks of cree, inc. 2 cpr3dc rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c notes 2&4 cxxxxr230-sxx00- x dc forward current 30 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +100c electrostatic discharge threshold (hbm) note 3 1000 v electrostatic discharge classifcation (mil-std-883e) note 3 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 4 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c460xr260-s xx 00- x 2.7 3.2 3.7 2 21 c470xr260-s xx 00- x 2.7 3.2 3.7 2 22 mechanical specifcations cxxxxr230-sxx00- x description dimension tolerance p-n junction area (m) 180 x 340 25 top area (m) 130 x 280 25 bottom area (m) 230 x 380 25 chip thickness (m) 150 15 au bond pad diameter (m) 105 -5, +15 au bond pad thickness (m) 1.2 0.5 back contact metal area (m) 140 x 300 15 back contact metal thickness (m) -c (sn flux eutectic) -d (sn eutectic) 2.0 0.5 0.3 0.1 notes: this product is intended for use in a pre-molded surface mount package. it should be tested in the package and environment consistent with the fnal use to validate applicability. c xxx xr230-s xxxx -c and Cd are not intended for use where extended reliable operation in high temperature and high humidity environments is required. for this condition or for use in a leaded radial lamp, use c xxx xr230-s xx 00-a. see cree xthin ? applications note for more information. maximum ratings are package-dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree xthin applications note for more assembly process information. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. the raet procedure is performed on each die. the esd classifcation of class 2 is based on sample testing according to mil -std-883e. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics measured in an integrating sphere using illuminance e. caution: to avoid leakage currents and achieve maximum output effciency, die attach material must not contact the side of the chip. see cree xthin applications note for more information. specifcations are subject to change without notice. xthin chips are shipped with the junction side down, not requiring a die tr ansfer prior to die attach. 1. 2. 3. 4. 5. 6. 7.
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xthin are registered trademarks, and xt, xr-18 and xr-21 are trademarks of cree, inc. 3 cpr3dc rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx xr230-s xx 00- x led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c460xr230-sxx00- x ) orders may be flled with any or all bins (c460xr230-01 xx - x ) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 20 ma. xr-2 c460xr230-s200- x c460xr230-0117- x c460xr230-0118- x c460xr230-0119- x c460xr230-0120- x c460xr230-0113- x c460xr230-0114- x c460xr230-0115- x c460xr230-0116- x dominant wavelength 457.5 nm 460 nm 462.5 nm 455 nm 465 nm 24.0 mw 21.0 mw radiant flux c470xr230-s200- x c470xr230-0113- x c470xr230-0114- x c470xr230-0115- x c470xr230-0116- x 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 21.0 mw dominant wavelength radiant flux dominant wavelength xr-8 c460xr230-s800- x c460xr230-0117- x c460xr230-0118- x c460xr230-0119- x c460xr230-0120- x c460xr230-0113- x c460xr230-0114- x c460xr230-0115- x c460xr230-0116- x c460xr230-0109- x c460xr230-0110- x c460xr230-0111- x c460xr230-0112- x 457.5 nm 460 nm 462.5 nm 455 nm 465 nm 24.0 mw 21.0 mw 18.0 mw radiant flux c470xr230-s800- x c470xr230-0113- x c470xr230-0114- x c470xr230-0115- x c470xr230-0116- x c470xr230-0109- x c470xr230-0110- x c470xr230-0111- x c470xr230-0112- x 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 21.0 mw 18.0 mw dominant wavelength radiant flux
copyright ? 2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xthin are registered trademarks, and xt, xr-18 and xr-21 are trademarks of cree, inc. 4 cpr3dc rev - cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the xthin product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. forward current vs. forward voltage 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vf (v) if (ma) wavelength shift vs forward current -1.00 0.00 1.00 2.00 3.00 4.00 5.00 6.00 0 5 10 15 20 25 30 if (ma) shift (nm) relative intensity vs forward current 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 if(ma) % intensity relative intensity vs peak wavelength relative intensity (%) wavelength (nm) 400 500 600 20 40 60 80 100
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